The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 17, 2011
Filed:
Dec. 17, 2008
Applicants:
Ashok K. Kapoor, Palo Alto, CA (US);
Damodar R. Thummalapally, Milpitas, CA (US);
Inventors:
Ashok K. Kapoor, Palo Alto, CA (US);
Damodar R. Thummalapally, Milpitas, CA (US);
Assignee:
SuVolta, Inc., Los Gatos, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/337 (2006.01); H01L 29/80 (2006.01);
U.S. Cl.
CPC ...
Abstract
A junction field effect transistor (JFET) can include a top gate structure and an active semiconductor region. The active semiconductor region can include a side surface and a top surface formed below the top gate structure. The active semiconductor region can also include a channel region formed below the top gate structure, a bottom gate region formed below the channel region, and a gate tie region formed on the side surface that makes an electrical connection between the top gate structure and the bottom gate region.