The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 17, 2011
Filed:
Oct. 16, 2006
Shinsuke Fujiwara, Itami, JP;
Tomoki Uemura, Itami, JP;
Takuji Okahisa, Itami, JP;
Koji Uematsu, Itami, JP;
Manabu Okui, Itami, JP;
Muneyuki Nishioka, Itami, JP;
Shin Hashimoto, Itami, JP;
Shinsuke Fujiwara, Itami, JP;
Tomoki Uemura, Itami, JP;
Takuji Okahisa, Itami, JP;
Koji Uematsu, Itami, JP;
Manabu Okui, Itami, JP;
Muneyuki Nishioka, Itami, JP;
Shin Hashimoto, Itami, JP;
Sumitomo Electric Industries, Ltd., Osaka-shi, Osaka, JP;
Abstract
An AlGaInN crystal substrate of the present invention has a main plane having an area of at least 10 cm. The main plane has an outer region located within 5 mm from an outer periphery of the main plane, and an inner region corresponding to a region other than the outer region. The inner region has a total dislocation density of at least 1×10cmand at most 1×10cm. It is thereby possible to provide an AlGaInN crystal substrate having a large size and a suitable dislocation density for serving as a substrate for a semiconductor device, a semiconductor device including the AlGaInN crystal substrate, and a method of manufacturing the same.