The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 17, 2011
Filed:
Jul. 17, 2009
Applicants:
Chun-chieh Fang, Tainan County, TW;
Po-jong Chen, Kaohsiung, TW;
Tsung-min Kuo, Tainan, TW;
Inventors:
Assignee:
United Microelectronics Corp., Hsinchu, TW;
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/44 (2006.01);
U.S. Cl.
CPC ...
Abstract
A semiconductor process is provided. First, a substrate having a dielectric layer formed thereon is provided. Thereafter, an interconnection structure including copper is formed in the dielectric layer. Afterwards, a metal layer is formed on the dielectric layer. The metal layer is then patterned to form a pad. An annealing process is performed, wherein the gas source for the annealing process includes hydrogen in a concentration of 50% to 90%.
Quick Actions:
Fang, Chun-Chieh. (2011). Semiconductor process (U.S. Patent No. 7943511). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7943511
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile