The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 17, 2011
Filed:
Feb. 12, 2008
Daniel C. Edelstein, White Plains, NY (US);
Nicholas C. M. Fuller, North Hills, NY (US);
David V. Horak, Essex Junction, VT (US);
Elbert E. Huang, Carmel, NY (US);
Wai-kin LI, Beacon, NY (US);
Anthony D. Lisi, Poughkeepsie, NY (US);
Satyanarayana V. Nitta, Poughquag, NY (US);
Shom Ponoth, Clifton Park, NY (US);
Daniel C. Edelstein, White Plains, NY (US);
Nicholas C. M. Fuller, North Hills, NY (US);
David V. Horak, Essex Junction, VT (US);
Elbert E. Huang, Carmel, NY (US);
Wai-Kin Li, Beacon, NY (US);
Anthony D. Lisi, Poughkeepsie, NY (US);
Satyanarayana V. Nitta, Poughquag, NY (US);
Shom Ponoth, Clifton Park, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
Sub-lithographic dimensioned air gap formation and related structure are disclosed. In one embodiment, a method includes forming a dielectric layer including interconnects on a substrate; depositing a cap layer on the dielectric layer; depositing a photoresist over the cap layer; patterning the photoresist to include a first trench pattern at most partially overlying the interconnects; forming a spacer within the first trench pattern to form a second trench pattern having a sub-lithographic dimension; transferring the second trench pattern into the cap layer and into the dielectric layer between the interconnects; and depositing another dielectric layer to form an air gap by pinching off the trench in the dielectric layer.