The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 17, 2011
Filed:
Feb. 24, 2009
Thomas W. Dyer, Pleasant Valley, NY (US);
Keith Kwong Hon Wong, Wappingers Falls, NY (US);
Mahender Kumar, Fishkill, NY (US);
Thomas W. Dyer, Pleasant Valley, NY (US);
Keith Kwong Hon Wong, Wappingers Falls, NY (US);
Mahender Kumar, Fishkill, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method for forming a memory device is provided by first forming at least one trench in a semiconductor substrate. Next, a lower electrode is formed in the at least one trench, and thereafter a conformal dielectric layer is formed on the lower electrode. An upper electrode is then formed on the conformal dielectric layer. The forming of the upper electrode may include a conformal deposition of metal nitride layer, and a non-conformal deposition of an electrically conductive material atop the metal nitride layer, in which the electrically conductive material encloses the at least one trench.