The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 17, 2011
Filed:
May. 02, 2008
Jamil Tamir-kheli, Los Angeles, CA (US);
William A. Goddard, Iii, Pasadena, CA (US);
Masayasu Miyata, Nagano-ken, JP;
Jamil Tamir-Kheli, Los Angeles, CA (US);
William A. Goddard, III, Pasadena, CA (US);
Masayasu Miyata, Nagano-ken, JP;
California Institute of Technology, Pasadena, CA (US);
Abstract
Methods for detecting the breakdown potential of a semiconductor device having a thin dielectric layer are disclosed. The method includes measuring a spectroscopy of the thin dielectric layer and determining whether the spectroscopy exhibits the presence of a breakdown precursor (H, H interstitial radical, H attached radical, and H attached dimer). Preferably, the method is carried out in the presence of a substantially significant applied electric field across dielectric layer. A semiconductor device tested in accordance with this method is also disclosed. Additionally, methods for reducing dielectric breakdown of a semiconductor device having a thin dielectric layer involving the substitution of a second molecule for Hmolecules present in the dielectric. This second molecule preferably does not react with Si or O to form an undesired attached state and may be an inert gas having a molecular size approximating that of a Hydrogen atom, such as Helium. A semiconductor device made using this method is also disclosed.