The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 10, 2011
Filed:
Dec. 02, 2008
Daniel Seymour Reed, Maple Plain, MN (US);
Yon LU, Edina, MN (US);
Song S. Xue, Edina, MN (US);
Dimitar V. Dimitrov, Edina, MN (US);
Paul E. Anderson, Eden Prairie, MN (US);
Daniel Seymour Reed, Maple Plain, MN (US);
Yon Lu, Edina, MN (US);
Song S. Xue, Edina, MN (US);
Dimitar V. Dimitrov, Edina, MN (US);
Paul E. Anderson, Eden Prairie, MN (US);
Seagate Technology LLC, Scotts Valley, CA (US);
Abstract
Method and apparatus for using a uni-directional write current to store different logic states in a non-volatile memory cell, such as a modified STRAM cell. In some embodiments, the memory cell has an unpinned ferromagnetic reference layer adjacent a cladded conductor, a ferromagnetic storage layer and a tunneling barrier between the reference layer and the storage layer. Passage of a current along the cladded conductor induces a selected magnetic orientation in the reference layer, which is transferred through the tunneling barrier for storage by the storage layer. Further, the orientation of the applying step is provided by a cladding layer adjacent a conductor along which a current is passed and the current induces a magnetic field in the cladding layer of the selected magnetic orientation.