The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 10, 2011
Filed:
Sep. 08, 2009
Applicants:
Iven Zheng, Beijing, CN;
Waley LI, Beijing, CN;
Linpeng Wei, Beijing, CN;
Hongwei Zhao, Beijing, CN;
Weiying LI, Beijing, CN;
Inventors:
Iven Zheng, Beijing, CN;
Waley Li, Beijing, CN;
Linpeng Wei, Beijing, CN;
Hongwei Zhao, Beijing, CN;
Weiying Li, Beijing, CN;
Assignee:
Freescale Semiconductor, Inc., Austin, TX (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K 3/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
An H bridge circuit includes a gate driver circuit coupled to a gate of an NMOS device. The output of the gate driver circuit is at a voltage from 0.1V to 0.4V during a dead time of the H bridge circuit. The gate voltage of the NMOS device is biased at 0.1˜0.4V to overcome the problems of minority carrier injection and power dissipation as compared with V=0 in a conventional H bridge circuit.