The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 10, 2011

Filed:

Sep. 23, 2009
Applicants:

Kenichi Watanabe, Kawasaki, JP;

Nobuhiro Misawa, Kawasaki, JP;

Satoshi Otsuka, Kawasaki, JP;

Inventors:

Kenichi Watanabe, Kawasaki, JP;

Nobuhiro Misawa, Kawasaki, JP;

Satoshi Otsuka, Kawasaki, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/544 (2006.01); H01L 29/06 (2006.01); H01L 21/768 (2006.01); H01L 21/78 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor device includes a substrate; a layered body formed on the substrate and including a multilayer interconnection structure, the layered body including multiple interlayer insulating films stacked in layers, the interlayer insulating films being lower in dielectric constant than a SiOfilm; a moisture resistant ring extending continuously in the layered body so as to surround a device region where an active element is formed; a protection groove part formed continuously along and outside the moisture resistant ring in the layered body so as to expose the surface of the substrate; a protection film continuously covering the upper surface of the layered body except an electrode pad on the multilayer interconnection structure, and the sidewall and bottom surfaces of the protection groove part; and an interface film including Si and C as principal components and formed between the protection film and the sidewall surfaces of the protection groove part.


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