The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 10, 2011
Filed:
Mar. 20, 2007
Applicants:
Michael Murphy, Somerset, NJ (US);
Milan Pophristic, Princeton, NJ (US);
Inventors:
Michael Murphy, Somerset, NJ (US);
Milan Pophristic, Princeton, NJ (US);
Assignee:
Power Integrations, Inc., San Jose, CA (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/072 (2006.01); H01L 31/109 (2006.01); H01L 31/0328 (2006.01); H01L 31/0336 (2006.01);
U.S. Cl.
CPC ...
Abstract
A semiconductor device is provided that includes a substrate, a first active layer disposed over the substrate, and a second active layer disposed on the first active layer. The second active layer has a higher bandgap than the first active layer such that a two-dimensional electron gas layer arises between the first active layer and the second active layer. A termination layer, which is disposed on the second active layer, includes InGaN. Source, gate and drain contacts are disposed on the termination layer.