The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 10, 2011
Filed:
Jul. 19, 2007
John W. Krawczyk, Richmond, KY (US);
James M. Mrvos, Lexington, KY (US);
Girish S. Patil, Lexington, KY (US);
Jason T. Vanderpool, Lexington, KY (US);
Brian C. Hart, Georgetown, KY (US);
Christopher J. Money, Lexington, KY (US);
Jeanne M. Saldanha Singh, Lexington, KY (US);
Karthik Vaideeswaran, Lexington, KY (US);
John W. Krawczyk, Richmond, KY (US);
James M. Mrvos, Lexington, KY (US);
Girish S. Patil, Lexington, KY (US);
Jason T. Vanderpool, Lexington, KY (US);
Brian C. Hart, Georgetown, KY (US);
Christopher J. Money, Lexington, KY (US);
Jeanne M. Saldanha Singh, Lexington, KY (US);
Karthik Vaideeswaran, Lexington, KY (US);
Lexmark International, Inc., Lexington, KY (US);
Abstract
A method of etching a semiconductor substrate. The method includes the steps of applying a photoresist etch mask layer to a device surface of the substrate. A select first area of the photoresist etch mask is masked, imaged and developed. A select second area of the photoresist etch mask layer is irradiated to assist in post etch stripping of the etch mask layer from the select second area. The substrate is etched to form fluid supply slots through a thickness of the substrate. At least the select second area of the etch mask layer is removed from the substrate, whereby mask layer residue formed from the select second area of the etch mask layer is significantly reduced.