The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 10, 2011
Filed:
Dec. 13, 2004
Bruce H. King, Albuquerque, NM (US);
Michael J. Renn, Hudson, WI (US);
Marcelino Essien, Cedar Crest, NM (US);
Gregory J. Marquez, Albuquerque, NM (US);
Manampathy G. Giridharan, Mason, OH (US);
Jyh-cherng Sheu, Hsinchu, TW;
Bruce H. King, Albuquerque, NM (US);
Michael J. Renn, Hudson, WI (US);
Marcelino Essien, Cedar Crest, NM (US);
Gregory J. Marquez, Albuquerque, NM (US);
Manampathy G. Giridharan, Mason, OH (US);
Jyh-Cherng Sheu, Hsinchu, TW;
Optomec Design Company, Albuquerque, NM (US);
Abstract
Method and apparatus for improved maskless deposition of electronic and biological materials using an extended nozzle. The process is capable of direct deposition of features with linewidths varying from a few microns to a fraction of a millimeter, and can be used to deposit features on targets with damage thresholds near 100° C. or less. Deposition and subsequent processing may be performed under ambient conditions and produce linewidths as low as 1 micron, with sub-micron edge definition. The extended nozzle reduces particle overspray and has a large working distance; that is, the orifice to target distance may be several millimeters or more, enabling direct write onto non-planar surfaces. The nozzle allows for deposition of features with linewidths that are approximately as small as one-twentieth the size of the nozzle orifice diameter, and is preferably interchangeable, enabling rapid variance of deposited linewidth.