The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 03, 2011
Filed:
Feb. 03, 2009
Xiaobin Wang, Chanhassen, MN (US);
Yong LU, Edina, MN (US);
Haiwen Xi, Prior Lake, MN (US);
Yuankai Zheng, Bloomington, MN (US);
Yiran Chen, Eden Prairie, MN (US);
Harry Hongyue Liu, Maple Grove, MN (US);
Dimitar Dimitrov, Edina, MN (US);
Wei Tan, Bloomington, MN (US);
Brian Seungwhan Lee, Eden Prairie, MN (US);
Xiaobin Wang, Chanhassen, MN (US);
Yong Lu, Edina, MN (US);
Haiwen Xi, Prior Lake, MN (US);
Yuankai Zheng, Bloomington, MN (US);
Yiran Chen, Eden Prairie, MN (US);
Harry Hongyue Liu, Maple Grove, MN (US);
Dimitar Dimitrov, Edina, MN (US);
Wei Tan, Bloomington, MN (US);
Brian Seungwhan Lee, Eden Prairie, MN (US);
Seagate Technology LLC, Scotts Valley, CA (US);
Abstract
A method and apparatus for writing data to a non-volatile memory cell, such as a spin-torque transfer random access memory (STRAM) memory cell. In some embodiments, a selected resistive state is written to a magnetic tunneling structure by applying a succession of indeterminate write pulses thereto until the selected resistive state is verified.