The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 03, 2011
Filed:
May. 28, 2010
Hongyue Liu, Maple Grove, MN (US);
Yong LU, Rosemount, MN (US);
Andrew Carter, Minneapolis, MN (US);
Yiran Chen, Eden Prairie, MN (US);
Hai LI, Eden Prairie, MN (US);
Hongyue Liu, Maple Grove, MN (US);
Yong Lu, Rosemount, MN (US);
Andrew Carter, Minneapolis, MN (US);
Yiran Chen, Eden Prairie, MN (US);
Hai Li, Eden Prairie, MN (US);
Seagate Technology LLC, Scotts Valley, CA (US);
Abstract
The present disclosure relates to memory arrays with read reference voltage cells. In particular the present disclosure relates to variable resistive memory cell apparatus and arrays that include a high resistance state reference memory cell and a low resistance state reference memory cell that provides a reliable average reference voltage on chip to compare to a read voltage of a selected memory cell and determine if the selected memory cell is in the high resistance state or low resistance state. These memory arrays are particularly suitable for use with spin-transfer torque memory cells and resolves many systematic issues related to generation of a reliable reference voltage.