The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 03, 2011

Filed:

Jun. 11, 2007
Applicants:

Yoshihito Mizuno, Nagoya, JP;

Masahiro Kinokuni, Nisshin, JP;

Shinji Koike, Toyota, JP;

Masahiro Matsumoto, Chigasaki, JP;

Fumitsugu Yanagihori, Chigasaki, JP;

Inventors:

Yoshihito Mizuno, Nagoya, JP;

Masahiro Kinokuni, Nisshin, JP;

Shinji Koike, Toyota, JP;

Masahiro Matsumoto, Chigasaki, JP;

Fumitsugu Yanagihori, Chigasaki, JP;

Assignees:

Toyota Jidosha Kabushiki Kaisha, Toyota-shi, Aichi-ken, JP;

ULVAC, Inc., Kanagawa-ken, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor device is provided with a silicon substrate, with a surface for soldering the silicon substrate to a ceramic substrate, and an electrode making contact with the surface of the silicon substrate. The electrode comprises a first conductor layer, a second conductor layer, and a third conductor layer. The first conductor layer makes contact with the surface of the silicon substrate and includes aluminum and silicon. The second conductor layer makes contact with the first conductor layer and includes titanium. The third conductor layer is separated from the first conductor layer by the second conductor layer and includes nickel.


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