The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 03, 2011

Filed:

Mar. 17, 2006
Applicants:

Yinon Degani, Highland Park, NJ (US);

Yu Fan, Dallas, TX (US);

Charley Chunlei Gao, Plano, TX (US);

Maureen Lau, Warren, NJ (US);

Kunquan Sun, Plano, TX (US);

Liguo Sun, Plano, TX (US);

Inventors:

Yinon Degani, Highland Park, NJ (US);

Yu Fan, Dallas, TX (US);

Charley Chunlei Gao, Plano, TX (US);

Maureen Lau, Warren, NJ (US);

Kunquan Sun, Plano, TX (US);

Liguo Sun, Plano, TX (US);

Assignee:

Sychip Inc., Plano, TX (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

The specification describes an integrated passive device (IPD) that is formed on a silicon substrate covered with an oxide layer. Unwanted accumulated charge at the silicon/oxide interface are rendered immobile by creating trapping centers in the silicon surface. The trapping centers are produced by a polysilicon layer interposed between the silicon substrate and the oxide layer.


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