The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 03, 2011
Filed:
Dec. 19, 2006
Terrence Mcdaniel, Boise, ID (US);
Terrence McDaniel, Boise, ID (US);
Micron Technology, Inc., Boise, ID (US);
Abstract
An apparatus having low resistance contacts in both the memory cell array and peripheral logic circuitry areas of a semiconductor device, for example, a DRAM memory device, is disclosed. In a buried bit line connection process flow, the present invention utilizes chemical vapor deposition of titanium to form titanium silicide in contact structures of the peripheral logic circuitry areas and physical vapor deposition to provide a metal mode (metallic) titanium layer in contact with the poly plugs in the memory cell array area of a semiconductor device, for example, a DRAM memory device according to the present invention. In this manner, the present invention avoids the potential drawbacks such as voiding in the poly plugs of the memory cell array due to the present of titanium silicide, which can cause significant reduction of device drain current and in extreme cases cause electrical discontinuity.