The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 03, 2011
Filed:
Nov. 21, 2007
Yeon-hee Kim, Seoul, KR;
Jung-hyun Lee, Yongin-si, KR;
Yong-young Park, Daejeon-si, KR;
Chang-soo Lee, Suwon-si, KR;
Yeon-hee Kim, Seoul, KR;
Jung-hyun Lee, Yongin-si, KR;
Yong-young Park, Daejeon-si, KR;
Chang-soo Lee, Suwon-si, KR;
Samsung Electronic Co., Ltd., Gyeonggi-do, KR;
Abstract
Example methods may provide a thin film etching method. Example thin film etching methods may include forming a Ga—In—Zn—O film on a substrate, forming a mask layer covering a portion of the Ga—In—Zn—O film, and etching the Ga—In—Zn—O film using the mask layer as an etch barrier, wherein an etching gas used in the etching includes chlorine. The etching gas may further include an alkane (CH) and Hgas. The chlorine gas may be, for example, Cl, BCl, and/or CCl, and the alkane gas may be, for example, CH.