The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 03, 2011
Filed:
Aug. 10, 2007
Yannick Feurprier, Watervliet, NY (US);
Yannick Feurprier, Watervliet, NY (US);
Tokyo Electron Limited, Tokyo, JP;
Abstract
A method of forming a damascene structure comprises preparing a film stack on the substrate, wherein the film stack comprises a SiCOH-containing layer formed on the substrate, a silicon oxide (SiO) layer formed on the SiCOH-containing layer, and a first mask layer formed on the silicon oxide layer. A trench pattern is created in the first mask layer. The trench pattern in the first mask layer is transferred to the silicon oxide layer, and then the first mask layer is removed. A second mask layer is formed on the silicon oxide layer. A via pattern is formed in the second mask layer. The via pattern is transferred to the SiCOH-containing layer using a first etching process, and then the second mask layer is removed. The trench pattern is transferred to the SiCOH-containing layer using a second etching process with plasma formed from a process composition comprising NF.