The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 03, 2011
Filed:
Jun. 02, 2008
Frank Heinrichsdorff, Mahlow, DE;
Nicolas Nagel, Dresden, DE;
Jens-uwe Sachse, Dresden, DE;
Andreas Voerckel, Dresden, DE;
Dominik Olligs, Dresden, DE;
Torsten Mueller, Dresden, DE;
Frank Heinrichsdorff, Mahlow, DE;
Nicolas Nagel, Dresden, DE;
Jens-Uwe Sachse, Dresden, DE;
Andreas Voerckel, Dresden, DE;
Dominik Olligs, Dresden, DE;
Torsten Mueller, Dresden, DE;
Qimonda AG, Munich, DE;
Abstract
A method for manufacturing an integrated circuit including at least one storage cell is provided. The method includes providing a substrate having a first and second side, and a plurality of parallel trenches so that a dividing wall is formed between adjacent trenches, filling the trenches with an insulating compound, providing a first insulating layer having a first and second side on the top surface of the dividing wall, wherein the first side is arranged on the substrate's first side, providing a first conductive layer having a first and second side, wherein the first side is arranged on the insulating layer's second side, wherein the conductive layer protrudes from the substrate surface, providing a second conductive layer having a first and second side, wherein the first side is located on the first conductive layer's second side, and removing parts of the second conductive layer by an anisotropic etching means.