The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 03, 2011
Filed:
Oct. 17, 2006
Shigeru Shiratake, Tokyo, JP;
Shigeru Shiratake, Tokyo, JP;
Elpida Memory Inc., Tokyo, JP;
Abstract
A method for manufacturing a semiconductor device whereby the process is simplified and high performance can be obtained in both a trench-gate transistor and a planar transistor that has a thin gate insulating film when the two transistors are formed on the same semiconductor substrate. In a state in which the gate insulating film () in a peripheral circuit region PE is covered by a protective film (), a gate trench () is formed in a memory cell region M, after which a gate insulating film () that is thicker than the gate insulating film () is formed on an inner wall of the gate trench () in a state in which the gate insulating film () of the peripheral circuit region PE is still covered by the protective film ().