The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 03, 2011
Filed:
Mar. 26, 2009
Tatsunori Murata, Tokyo, JP;
Mikio Tsujiuchi, Tokyo, JP;
Ryoji Matsuda, Tokyo, JP;
Renesas Electronics Corporation, Kanagawa, JP;
Abstract
To provide a manufacturing method of a semiconductor device capable of forming, as a protective film of an MTJ element, a silicon nitride film having good insulation properties without deteriorating the properties of the MTJ element. The method of the invention includes steps of forming a silicon nitride film over the entire surface including an MTJ element portion (MTJ element and an upper electrode) while using a parallel plate plasma CVD apparatus as a film forming apparatus and a film forming gas not containing NHbut composed of SiH/N/helium (He). The film forming temperature is set at from 200 to 350° C. More ideally, a flow rate ratio of He to SiHis set at from 100 to 125.