The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 03, 2011
Filed:
Jun. 30, 2009
Hsueh-shih Chen, Hsinchu, TW;
Dai-luon Lo, Dahu Township, Miaoli County, TW;
Gwo-yang Chang, Jiali Township, Tainan County, TW;
Chien-ming Chen, Yangmei Township, Taoyuan County, TW;
Hsueh-Shih Chen, Hsinchu, TW;
Dai-Luon Lo, Dahu Township, Miaoli County, TW;
Gwo-Yang Chang, Jiali Township, Tainan County, TW;
Chien-Ming Chen, Yangmei Township, Taoyuan County, TW;
Industrial Technology Research Institute, Hsinchu, TW;
Abstract
A method for manufacturing a quantum-dot element utilizes a reaction chamber for evaporating or sputtering at least one electrode layer or at least one buffer layer on a substrate. A substrate-supporting base is located inside the reaction chamber for fixing the substrate. An atomizer has a gas inlet and a sample inlet. More specifically, the gas inlet and the sample inlet feed the atomizer respectively with a gas and a precursor solution having a plurality of functionalized quantum dots, and thereby form a quantum-dot layer on the substrate. The method for manufacturing a quantum-dot element forms a quantum dot layer with uniformly distributed quantum dots and integrates the processes for forming the quantum-dot layer, the buffer layer, and the electrode layer together in the same chamber.