The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 26, 2011
Filed:
Aug. 19, 2005
Yong-fa A. Wang, Coppell, TX (US);
Richard A. Davis, Plano, TX (US);
Larry A. Rehn, Richardson, TX (US);
Yong-Fa A. Wang, Coppell, TX (US);
Richard A. Davis, Plano, TX (US);
Larry A. Rehn, Richardson, TX (US);
Honeywell International Inc., Morristown, NJ (US);
Abstract
A potassium hydroxide (KOH) etch process can produce deep high aspect ratio trenches in (110) oriented silicon substrates. The trenches, however, are perpendicular to the (111) direction of the silicon substrate's crystal lattice. The trenches are used to produce thermally isolating areas and through the wafer electrical connections. These structures can be produced in a cost effective manner because of the nearly ideal capabilities of the KOH etch process when it is applied to appropriate materials at appropriate orientations.