The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 26, 2011
Filed:
Jan. 06, 2009
Junya Maruyama, Kanagawa, JP;
Toru Takayama, Kanagawa, JP;
Masafumi Morisue, Kanagawa, JP;
Ryosuke Watanabe, Kanagawa, JP;
Eiji Sugiyama, Kanagawa, JP;
Susumu Okazaki, Kanagawa, JP;
Kazuo Nishi, Yamanashi, JP;
Jun Koyama, Kanagawa, JP;
Takeshi Osada, Kanagawa, JP;
Takanori Matsuzaki, Kanagawa, JP;
Junya Maruyama, Kanagawa, JP;
Toru Takayama, Kanagawa, JP;
Masafumi Morisue, Kanagawa, JP;
Ryosuke Watanabe, Kanagawa, JP;
Eiji Sugiyama, Kanagawa, JP;
Susumu Okazaki, Kanagawa, JP;
Kazuo Nishi, Yamanashi, JP;
Jun Koyama, Kanagawa, JP;
Takeshi Osada, Kanagawa, JP;
Takanori Matsuzaki, Kanagawa, JP;
Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken, JP;
Abstract
The area occupied by a photo-sensor element may be reduced and multiple elements may be integrated in a limited area so that the sensor element can have higher output and smaller size. Higher output and miniaturization are achieved by uniting a sensor element using an amorphous semiconductor film (typically an amorphous silicon film) and an output amplifier circuit including a TFT with a semiconductor film having a crystal structure (typically a poly-crystalline silicon film) used as an active layer over a plastic film substrate that can resist the temperature in the process for mounting such as a solder reflow process. A sensor element that can resist bending stress can be obtained.