The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7928014 B1

PDF
Full Text
Expired
Date of Patent:
Apr. 19, 2011

Filed:

Jun. 19, 2007
Applicant:

Satoshi Ogino, Tokyo, JP;

Inventor:

Satoshi Ogino, Tokyo, JP;

Assignee:

Elpida Memory, Inc., Tokyo, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01); H01L 21/461 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method for manufacturing a semiconductor device includes: mounting a wafer having an exposed silicon nitride film, on an electrode received in a plasma chamber; dry-cleaning the chamber to remove reaction products accumulated on the wall and ceiling of the chamber, anisotropic-etching the silicon nitride film and an underlying silicon film for patterning; and removing the wafer from the chamber. The method repeats the treatment for a number of semiconductor wafers.


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Ogino, Satoshi. (2011). Method for manufacturing a semiconductor device including a silicon film (U.S. Patent No. 7928014). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7928014

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