The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 19, 2011
Filed:
Apr. 09, 2009
Applicants:
Akihiko Endo, Tokyo, JP;
Tatsumi Kusaba, Tokyo, JP;
Inventors:
Akihiko Endo, Tokyo, JP;
Tatsumi Kusaba, Tokyo, JP;
Assignee:
Sumco Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/30 (2006.01); H01L 21/46 (2006.01);
U.S. Cl.
CPC ...
Abstract
Even if an oxygen ion implanted layer in a wafer for active layer is not a completely continuous SiOlayer but a layer mixed partially with Si or SiO, it is removed by here is provided a method for producing a bonded wafer in which it is possible to remove an oxygen ion implanted layer effectively as it is by repetitive treatment with an oxidizing solution and HF solution at a step of removing the oxygen ion implanted layer in a bonded wafer.