The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 19, 2011
Filed:
Jul. 19, 2010
Hiromichi Horie, Kanagawa-Ken, JP;
Yoshiyuki Fukuda, Kanagawa-Ken, JP;
Hiromasa Kato, Kanagawa-Ken, JP;
Nobuaki Nakashima, Kanagawa-Ken, JP;
Yasuhisa Makino, Kanagawa-Ken, JP;
Hiromichi Horie, Kanagawa-Ken, JP;
Yoshiyuki Fukuda, Kanagawa-Ken, JP;
Hiromasa Kato, Kanagawa-Ken, JP;
Nobuaki Nakashima, Kanagawa-Ken, JP;
Yasuhisa Makino, Kanagawa-Ken, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Toshiba Materials Co., Ltd., Yokohama-Shi, JP;
Abstract
The present invention provides a getter material configured by a pressed powder mixture comprising Ba—Al alloy powder and Ni powder, wherein when the pressed powder mixture is heated in a vacuum atmosphere or an inert gas atmosphere, a temperature at which an exothermic reaction starts is ranging from 750° C. to 900° C. According to this getter material, since the temperature at which the pressed powder mixture starts the exothermic reaction is set within a range from 750° C. to 900° C., there can be provided a getter material and an evaporation type getter device capable of suitably controlling an evaporation amount of getter components under a stable condition, and is excellent in responsiveness because a time ranging from a starting time of heating the getter material to a starting time of evaporation of the getter components can be shortened. In addition, the metal container to be filled with the getter material is free from deformation and melting, and a heat-evaporation process time of the getter material can be shortened, so that there can be provided the evaporation type getter device excellent in responsiveness because a time required for the electron tube to attain to a predetermined vacuum degree can be also shortened.