The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 12, 2011
Filed:
Sep. 09, 2008
Tatsuya Ohguro, Yokohama, JP;
Takashi Izumida, Yokohama, JP;
Satoshi Inaba, Yokohama, JP;
Kimitoshi Okano, Yokohama, JP;
Nobutoshi Aoki, Yokohama, JP;
Tatsuya Ohguro, Yokohama, JP;
Takashi Izumida, Yokohama, JP;
Satoshi Inaba, Yokohama, JP;
Kimitoshi Okano, Yokohama, JP;
Nobutoshi Aoki, Yokohama, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A semiconductor device has a plurality of fins formed on a semiconductor substrate to be separated from each other, a first contact region which connects commonly one end side of the plurality of fins, a second contact region which connects commonly the other end side of the plurality of fins, a gate electrode arranged to be opposed to at least both side surfaces of the plurality of fins by sandwiching a gate insulating film therebetween, a source electrode including the first contact region and the plurality of fins on a side closer to the first contact region than the gate electrode, and a drain electrode including the second contact region and the plurality of fins on a side closer to the second contact than the gate electrode. The ratio Rd/Rs of a resistance Rd of each fin in the drain region to a resistance Rs of each fin in the source region is larger than 1.