The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 12, 2011
Filed:
Jan. 12, 2010
Natalie Nguyen, San Jose, CA (US);
Paul Wai Kie Poon, Fremont, CA (US);
Steven J. Radigan, Fremont, CA (US);
Michael Konevecki, San Jose, CA (US);
Yung-tin Chen, Santa Clara, CA (US);
Natalie Nguyen, San Jose, CA (US);
Paul Wai Kie Poon, Fremont, CA (US);
Steven J. Radigan, Fremont, CA (US);
Michael Konevecki, San Jose, CA (US);
Yung-Tin Chen, Santa Clara, CA (US);
SanDisk 3D LLC, Milpitas, CA (US);
Abstract
A method of making a device includes forming a first sacrificial layer over an underlying layer, forming a first photoresist layer over the first sacrificial layer, patterning the first photoresist layer to form first photoresist features, rendering the first photoresist features insoluble to a solvent, forming a second photoresist layer over the first photoresist features, patterning the second photoresist layer to form second photoresist features, etching the first sacrificial layer using both the first and the second photoresist features as a mask to form first sacrificial features, forming a spacer layer over the first sacrificial features, etching the spacer layer to form spacer features and to expose the sacrificial features, removing the first sacrificial features, and etching at least part of the underlying layer using the spacer features as a mask.