The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 12, 2011
Filed:
Feb. 21, 2008
Chong-chul Chai, Seoul, KR;
Mee-hye Jung, Suwon-si, KR;
Woo-geun Lee, Yongin-si, KR;
Woo-seok Jeon, Seongnam-si, KR;
Young-wook Lee, Suwon-si, KR;
Jung-in Park, Suwon-si, KR;
Jun-hyung Souk, Yongin-si, KR;
Won-kie Chang, Seoul, KR;
Shi-yul Kim, Yongin-si, KR;
Chong-Chul Chai, Seoul, KR;
Mee-Hye Jung, Suwon-si, KR;
Woo-Geun Lee, Yongin-si, KR;
Woo-Seok Jeon, Seongnam-si, KR;
Young-Wook Lee, Suwon-si, KR;
Jung-In Park, Suwon-si, KR;
Jun-Hyung Souk, Yongin-si, KR;
Won-Kie Chang, Seoul, KR;
Shi-Yul Kim, Yongin-si, KR;
Abstract
A mask includes a transparent substrate, a light-blocking layer and a halftone layer. The light-blocking layer includes a source electrode pattern portion including a first electrode portion, a second electrode portion and a third electrode portion, and a drain electrode pattern portion disposed between the second electrode portion and the third electrode portion. The halftone layer includes a halftone portion corresponding to a spaced-apart portion between the source electrode pattern portion and the drain electrode pattern portion, and a dummy halftone portion more protrusive than ends of the second electrode portion and the third electrode portion. Thus, a photoresist pattern corresponding to a channel portion of a thin film transistor (TFT) may be formed with a uniform thickness, to thereby prevent an excessive etching of the channel portion.