The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 12, 2011
Filed:
Sep. 15, 2006
Reinhard Schauer, Laufen, DE;
Christian Hager, Kastl, DE;
Reinhard Schauer, Laufen, DE;
Christian Hager, Kastl, DE;
Siltronic AG, Munich, DE;
Abstract
Epitaxially coated silicon wafers, are produced by epitaxially coating a multiplicity of wafers polished at least on their front sides, successively and individually in an epitaxy reactor, by placing a silicon wafer on a susceptor, pretreating under a hydrogen atmosphere followed by addition of an etching medium to the hydrogen atmosphere, coating epitaxially on the polished front side and removing the water from the epitaxy reactor. The susceptor is then heated, in each case, to a temperature of at least 1000° C. under a hydrogen atmosphere, and furthermore an etching treatment of the susceptor and a momentary coating of the susceptor with silicon are effected after a specific number of epitaxial coatings. Silicon wafers characterized by a parameter R30-1 mm of −10 nm to +10 nm, determined at a distance of 1 mm from the edge of the silicon wafer are produced.