The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 05, 2011

Filed:

Dec. 23, 2005
Applicants:

Nicolas Benoit, Jena, DE;

Torsten Feigl, Jena, DE;

Norbert Kaiser, Jena, DE;

Sergiy Yulin, Jena, DE;

Inventors:

Nicolas Benoit, Jena, DE;

Torsten Feigl, Jena, DE;

Norbert Kaiser, Jena, DE;

Sergiy Yulin, Jena, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
F21V 9/04 (2006.01); G02B 1/10 (2006.01);
U.S. Cl.
CPC ...
Abstract

In a multilayer mirror () for the reflection of EUV radiation containing a large number of alternating molybdenum layers () and silicon layers (), a barrier layer () containing a silicon nitride or a silicon boride is included at a number of interfaces between the molybdenum layers () and the silicon layers (). As a result of the barrier layers () of a silicon nitride or of a silicon boride, high thermal stability is achieved, in particular high long-term stability at temperatures of more than 300° C., whilst at the same time achieving high reflectivity in the multilayer mirror. A multilayer mirror () of this type can, in particular, be used as a heatable collector mirror for an EUV radiation source.


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