The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 05, 2011
Filed:
Apr. 28, 2010
Bruno Ghyselen, Seyssinet-Pariset, FR;
Carlos Mazure, St. Nazaire les Eymes, FR;
Emmanuel Arene, Biviers, FR;
Bruno Ghyselen, Seyssinet-Pariset, FR;
Carlos Mazure, St. Nazaire les Eymes, FR;
Emmanuel Arene, Biviers, FR;
S.O.I.Tec Silicon on Insulator Technologies, Bernin, FR;
Abstract
A method for forming a structure that includes a relaxed or pseudo-relaxed layer on a substrate. The method includes the steps of growing an elastically stressed layer of semiconductor material on a donor substrate; forming a glassy layer of a viscous material on the stressed layer; removing a portion of the donor substrate to form a structure that includes the glassy layer, the stressed layer and a surface layer of donor substrate material; patterning the stressed layer; and heat treating the structure at a temperature of at least a viscosity temperature of the glassy layer to relax the stressed layer and form the relaxed or pseudo-relaxed layer of the structure.