The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 05, 2011
Filed:
Mar. 08, 2010
Ammar Munir Nayfeh, Stanford, CA (US);
Chi on Chui, San Mateo, CA (US);
Krishna C. Saraswat, Saratoga, CA (US);
Takao Yonehara, Kawasaki, JP;
Ammar Munir Nayfeh, Stanford, CA (US);
Chi On Chui, San Mateo, CA (US);
Krishna C. Saraswat, Saratoga, CA (US);
Takao Yonehara, Kawasaki, JP;
Canon Kabushiki Kaisha, Tokyo, JP;
The Board of Trustees of the Leland Stanford Junior University, Palo Alto, CA (US);
Abstract
Germanium circuit-type structures are facilitated. In one example embodiment, a multi-step growth and anneal process is implemented to grow Germanium (Ge) containing material, such as heteroepitaxial-Germanium, on a substrate including Silicon (Si) or Silicon-containing material. In certain applications, defects are generally confined near a Silicon/Germanium interface, with defect threading to an upper surface of the Germanium containing material generally being inhibited. These approaches are applicable to a variety of devices including Germanium MOS capacitors, pMOSFETs and optoelectronic devices.