The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 29, 2011
Filed:
Nov. 26, 2008
Bin LI, Chantilly, VA (US);
Adam Matthew Bumgarner, Duluth, GA (US);
Daniel Pirkl, Centreville, VA (US);
Bin Li, Chantilly, VA (US);
Adam Matthew Bumgarner, Duluth, GA (US);
Daniel Pirkl, Centreville, VA (US);
BAE Systems Information and Electronic Systems Integration Inc., Nashua, NH (US);
Ovonyx, Inc., Rochester Hills, MI (US);
Abstract
A read reference circuit for a sense amplifier within a chalcogenide memory device is disclosed. The read reference circuit provides a reference voltage level to the sense amplifier for distinguishing between a logical '0' state and a logical '1' state within a chalcogenide memory cell. In conjunction with a precharge circuit, the read reference circuit generates a selectable read reference current to the sense amplifier in order to detect the logical state of the chalcogenide memory cell. The precharge circuit precharges the bitlines of the chalcogenide memory cell before the sense amplifier detects the logical state of the chalcogenide memory cell.