The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 29, 2011
Filed:
Aug. 03, 2005
Michel Zecri, Bevenais, FR;
Luca Bertolini, Toulouse, IT;
Patrice Besse, Toulouse, FR;
Maryse Bafleur, Castanet Tolosan, FR;
Nicolas Nolhier, Espanes, FR;
Michel Zecri, Bevenais, FR;
Luca Bertolini, Toulouse, IT;
Patrice Besse, Toulouse, FR;
Maryse Bafleur, Castanet Tolosan, FR;
Nicolas Nolhier, Espanes, FR;
Freescale Semiconductor, Inc., Austin, TX (US);
Abstract
A semiconductor switch arrangement comprises a bipolar transistor and a semiconductor power switch having an input node, an output node and a control node for allowing a current path to be formed between the input node and the output node. The bipolar transistor is coupled between the input node and the control node such that upon receiving an electro-static discharge pulse the bipolar transistor allows a current to flow from the input node to the control node upon a predetermined voltage being exceeded at the input node to allow the control node to cause a current to flow from the input node to the output node. Thus, the bipolar transistor device protects the semiconductor switch device, such as an LDMOS device, against ESD, namely protection against power surges of, say, several amperes in less than 1 usec.