The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 29, 2011
Filed:
May. 24, 2006
Yasuhiro Shimamoto, Tokorozawa, JP;
Jiro Yugami, Yokohama, JP;
Masao Inoue, Ikeda, JP;
Masaharu Mizutani, Itami, JP;
Yasuhiro Shimamoto, Tokorozawa, JP;
Jiro Yugami, Yokohama, JP;
Masao Inoue, Ikeda, JP;
Masaharu Mizutani, Itami, JP;
Renesas Electronics Corporation, Kanagawa, JP;
Abstract
An object of the present invention is to improve the performance of a semiconductor device having a CMISFET. Each of an n channel MISFET and a p channel MISFET which form the CMISFET includes a gate insulating film composed of a silicon oxynitride film and a gate electrode including a silicon film positioned on the gate insulating film. Metal elements such as Hf are introduced near the interface between the gate electrode and the gate insulating film with a surface density of 1×10to 5×10atoms/cm. The impurity concentration of channel regions of the n channel MISFET and the p channel MISFET is controlled to be equal to or lower than 1.2×10/cm.