The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 29, 2011
Filed:
Sep. 27, 2005
Applicant:
Wang Nang Wang, Bath, GB;
Inventor:
Wang Nang Wang, Bath, GB;
Assignee:
Nanogan Limited, Bath, GB;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/18 (2006.01);
U.S. Cl.
CPC ...
Abstract
A high fill factor textured light emitting diode structure comprises: a first textured cladding and contact layer () comprising a doped III-V or II-VI group compound semiconductor or alloys of such semiconductors deposited by epitaxial lateral overgrowth (ELOG) onto a patterned substrate (); a textured undoped or doped active layer () comprising a III-V or II-VI group semiconductor or alloys of such semiconductors and where radiative recombination of electrons aid holes occurs or intersubband transition occurs; and a second textured cladding and contact layer () comprising a doped III-V or II-VI group semiconductor or alloys of such semiconductors.