The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 29, 2011
Filed:
Feb. 24, 2009
Kazunari Kurita, Tokyo, JP;
Shuichi Omote, Tokyo, JP;
Kazunari Kurita, Tokyo, JP;
Shuichi Omote, Tokyo, JP;
Sumco Corporation, Tokyo, JP;
Abstract
A silicon substrate is manufactured from single-crystal silicon which is grown to have a carbon concentration equal to or higher than 1.0×10atoms/cmand equal to or lower than 1.6×10atoms/cmand an initial oxygen concentration equal to or higher than 1.4×10atoms/cmand equal to or lower than 1.6×10atoms/cmby a CZ method. A device is formed on a front, the thickness of the silicon substrate is equal to or more than 5 μm and equal to or less than 40 μm, and extrinsic gettering which produces residual stress equal to or more than 5 Mpa and equal to or less than 200 Mpa is applied to a back face of the substrate.