The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 22, 2011
Filed:
Nov. 13, 2007
Thomas Rueckes, Rockport, MA (US);
Brent M. Segal, Woburn, MA (US);
Bernhard Vogeli, Zollikon, CH;
Darren K. Brock, Woburn, MA (US);
Venkatachalam C. Jaiprakash, Fremont, CA (US);
Claude L. Bertin, Burlington, VT (US);
Thomas Rueckes, Rockport, MA (US);
Brent M. Segal, Woburn, MA (US);
Bernhard Vogeli, Zollikon, CH;
Darren K. Brock, Woburn, MA (US);
Venkatachalam C. Jaiprakash, Fremont, CA (US);
Claude L. Bertin, Burlington, VT (US);
Nantero, Inc., Woburn, MA (US);
Abstract
Under one aspect, non-volatile transistor device includes a source and drain with a channel in between; a gate structure made of a semiconductive or conductive material disposed over an insulator over the channel; a control gate made of a semiconductive or conductive material; and an electromechanically-deflectable nanotube switching element in fixed contact with one of the gate structure and the control gate structure and is not in fixed contact with the other of the gate structure and the control gate structure. The device has a network of inherent capacitances, including an inherent capacitance of an undeflected nanotube switching element in relation to the gate structure. The network is such that the nanotube switching element is deflectable into contact with the other of the gate structure and the control gate structure in response to signals being applied to the control gate and one of the source region and drain region.