Content addressable memory having bidirectional lines that support passing read/write data and search data

Abstract

A CAM column structure includes an interface that drives search data to a plurality of CAM cells via a search line pair. The CAM cells are divided into sections, each section including: a set of CAM cells, a bit line pair coupled to the set of CAM cells, a sense amplifier coupled to the bit line pair, a tri-state read buffer configured to drive read data from the sense amplifier to the search line pair, and a pair of tri-state write buffers configured to drive write data from the search line pair to the bit line pair. In one embodiment, the pair of tri-state write buffers is replaced by a pair of switches that couple the search line pair to the sense amplifier. The search line pair may be segmented by tri-state buffers, which are controlled to drive the search, read and write data along the search line pair.