The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 22, 2011
Filed:
Mar. 03, 2009
Hiroaki Taketani, Tokyo, JP;
Hiroaki Taketani, Tokyo, JP;
Elpida Memory, Inc., Tokyo, JP;
Abstract
A semiconductor device including a trench-gate MOS transistor on a semiconductor substrate is constituted of a trench formed in an active region, a fin channel region formed between a separation region and the trench in the active region, a first gate electrode embedded in the separation region in connection with the fin channel region via a first gate insulating film, a second gate electrode embedded in the trench in connection with the fin channel region via a second gate insulating film, and a source-drain diffusion region disposed beside the trench in the active region below the second gate electrode.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile