The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 22, 2011
Filed:
Sep. 29, 2008
Hongbin Fang, San Jose, CA (US);
Timothy Weidman, Sunnyvale, CA (US);
Fang Mei, Foster City, CA (US);
Yaxin Wang, Fremont, CA (US);
Arulkumar Shanmugasundram, Sunnyvale, CA (US);
Christopher D. Bencher, San Jose, CA (US);
Mehul B. Naik, San Jose, CA (US);
Hongbin Fang, San Jose, CA (US);
Timothy Weidman, Sunnyvale, CA (US);
Fang Mei, Foster City, CA (US);
Yaxin Wang, Fremont, CA (US);
Arulkumar Shanmugasundram, Sunnyvale, CA (US);
Christopher D. Bencher, San Jose, CA (US);
Mehul B. Naik, San Jose, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
A method and apparatus for processing a semiconductor substrate including depositing a capping layer upon a conductive material formed on the substrate, reducing oxide formation on the capping layer, and then depositing a dielectric material. A method and apparatus for processing a semiconductor substrate including depositing a capping layer upon a conductive material formed on a substrate, exposing the capping layer to a plasma, heating the substrate to more than about 100° C., and depositing a low dielectric constant material.