The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 22, 2011

Filed:

Feb. 03, 2009
Applicant:

Shinji Ohara, Chuo-ku, JP;

Inventor:

Shinji Ohara, Chuo-ku, JP;

Assignee:

Elpida Memory, Inc., Tokyo, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/8238 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor device includes an SOI substrate, a first STI-type isolation region, a second STI-type isolation region, and an alignment mark region. The SOI substrate includes a support substrate, an insulating layer deposited on the support substrate, and a semiconductor layer which includes a thin film region and a thick film region. The thin film region includes a first semiconductor layer deposited on the support substrate, and the thick film region includes the first semiconductor layer and a second semiconductor layer deposited on a part of the first semiconductor layer. The first STI-type isolation region is disposed at the thin film region. The second STI-type isolation region is disposed at the thick film region. The alignment mark region is disposed at the thick film region. An alignment mark to be used for alignment of the second STI-type isolation region is disposed at the alignment mark region.


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