The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 15, 2011

Filed:

Nov. 16, 2006
Applicants:

Koki Yano, Sodegaura, JP;

Kazuyoshi Inoue, Sodegaura, JP;

Nobuo Tanaka, Sodegaura, JP;

Tokie Tanaka, Legal Representative, Sodegaura, JP;

Inventors:

Koki Yano, Sodegaura, JP;

Kazuyoshi Inoue, Sodegaura, JP;

Nobuo Tanaka, Sodegaura, JP;

Tokie Tanaka, legal representative, Sodegaura, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/10 (2006.01);
U.S. Cl.
CPC ...
Abstract

The present invention provides a semiconductor thin film which can be manufactured at a relatively low temperature even on a flexible resin substrate. As a semiconductor thin film having a low carrier concentration, a high Hall mobility and a large energy band gap, an amorphous film containing zinc oxide and tin oxide is formed to obtain a carrier density of 10cmor less, a Hall mobility of 2 cm/V·sec or higher, and an energy band gap of 2.4 eV or more. Then, the amorphous film is oxidized to form a transparent semiconductor thin film


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