The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 15, 2011
Filed:
Aug. 08, 2008
Tsung-shune Chin, Hsinchu County, TW;
Chin-fu Kao, Taipei, TW;
Ming-jinn Tsai, Hsinchu, TW;
Chien-min Lee, Hsinchu County, TW;
Tsung-Shune Chin, Hsinchu County, TW;
Chin-Fu Kao, Taipei, TW;
Ming-Jinn Tsai, Hsinchu, TW;
Chien-Min Lee, Hsinchu County, TW;
Industrial Technology Research Institute, Hsinchu, TW;
National Tsing Hua University, Hsinchu, TW;
Abstract
A phase change memory device is disclosed, including a substrate, a phase change layer over the substrate, a first electrode electrically connecting a first side of the phase change layer, a second electrode electrically connecting a second side of the phase change layer, wherein the phase change layer composes mainly of gallium (Ga), antimony (Sb) and tellurium (Te) and unavoidable impurities, having the composition range of GaTeSb, 5<x<40; 8≦y<48; 42<z<80; and x+y+z=100.