The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 15, 2011
Filed:
Apr. 30, 2008
Bastiaan Arie Korevaar, Schenectady, NY (US);
James Neil Johnson, Scotia, NY (US);
Todd Ryan Tolliver, Clifton Park, NY (US);
Theodore Carlton Kreutz, Rensselaer, NY (US);
Xiaolan Zhang, Niskayuna, NY (US);
Bastiaan Arie Korevaar, Schenectady, NY (US);
James Neil Johnson, Scotia, NY (US);
Todd Ryan Tolliver, Clifton Park, NY (US);
Theodore Carlton Kreutz, Rensselaer, NY (US);
Xiaolan Zhang, Niskayuna, NY (US);
General Electric Company, Niskayuna, NY (US);
Abstract
A semiconductor structure is described, including a semiconductor substrate and a semiconductor layer disposed on the semiconductor substrate. The semiconductor layer is both compositionally graded and structurally graded. Specifically, the semiconductor layer is compositionally graded through its thickness from substantially intrinsic at the interface with the substrate to substantially doped at an opposite surface. Further, the semiconductor layer is structurally graded through its thickness from substantially crystalline at the interface with the substrate to substantially amorphous at the opposite surface. Related methods are also described.