The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 15, 2011

Filed:

Dec. 07, 2006
Applicants:

Qingguo Wu, Vancouver, WA (US);

Easwar Srinivasan, Beaverton, OR (US);

Dan Vitkavage, Tualatin, OR (US);

Inventors:

Qingguo Wu, Vancouver, WA (US);

Easwar Srinivasan, Beaverton, OR (US);

Dan Vitkavage, Tualatin, OR (US);

Assignee:

Novellus Systems, Inc., San Jose, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C23C 16/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

Methods of preparing low-k carbon-doped oxide (CDO) films having high mechanical strength are provided. The methods involve contacting the substrate with a CDO precursor to deposit the film typically using a plasma-enhanced chemical vapor deposition (PECVD) method. After the film is deposited, it is exposed to ultraviolet radiation in a manner that increases cross-linking and/or lowers the dielectric constant of the film. The resulting films have ultra-low dielectric constants, e.g., about 2.5, but also high mechanical strength, e.g., a modulus of at least about 7.5 GPa. In certain embodiments, a single hydrocarbon precursor is used, resulting in an improved process for obtaining ULK films that does not require dual (porogen and backbone) precursors.

Published as:

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