The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 08, 2011
Filed:
Sep. 24, 2009
Hsin-ming Chen, Tainan County, TW;
Hai-ming Lee, Taipei, TW;
Shih-jye Shen, Hsinchu, TW;
Ching-hsiang Hsu, Hsinchu, TW;
Hsin-Ming Chen, Tainan County, TW;
Hai-Ming Lee, Taipei, TW;
Shih-Jye Shen, Hsinchu, TW;
Ching-Hsiang Hsu, Hsinchu, TW;
eMemory Technology Inc., Hsinchu, TW;
Abstract
An operating method of a non-volatile memory adapted for a non-volatile memory disposed on an SOI substrate including a first conductive type silicon body layer is provided. The non-volatile memory includes a gate, a charge storage structure, a second conductive type drain region, and a second conductive type source region. In operating such a non-volatile memory, voltages are applied to the gate, the second conductive type drain region, the second conductive type source region and the first conductive type silicon body layer beneath the gate, to inject electrons or holes in to the charge storage structure or evacuate the electrons from the charge storage structure by a method selected from a group consisting of channel hot carrier injection, source side injection, band-to-band tunnelling hot carrier injection and Fowler-Nordheim (F-N) tunnelling.